Growth and Scintillation Properties of Pr Doped $({\hbox {Gd}},{\hbox {Y}})_{3}({\hbox {Ga}},{\hbox {Al}})_{5} {\hbox {O}}_{12}$ Single Crystals

Pr: (Gd,Y)
₃
(Ga,Al)
₅
O
₁₂
single crystals were grown by the μ-PD method with RF heating system. Pr
³⁺
5d-4f emission within 300-350 nm, Pr
³⁺
4f-4f emission within 480-650 nm and Gd
³⁺
4f-4f emission at 310 nm are observed in Pr: (Gd,Y)
₃
(Ga,Al)
₅
O
₁₂
crystals. In order to determine light yield, the energy spectra were measured under 662 keV γ-ray excitation (
¹³⁷
Cs source), detected by a PMT H6521 (Hamamatsu). The light output of Pr1%:Gd
₁
Y
₂
Ga
₃
Al
₂
O
₁₂
sample was of about one fifth of that of the Cz grown Pr:LuAG standard sample, i.e., around 4,000 photon/MeV. Two component scintillation decay shows the decay times (intensity) of 5.7 ns(5%), 38.7 ns (31%) and 187 ns (63%) using the PMT and digital oscilloscope TDS5032B detection.