An Investigation of Linearity Performance and Intermodulation Distortion of GME CGT MOSFET for RFIC Design

In this paper, an extensive study on the intermodulation distortion and the linearity of gate-material-engineered cylindrical-gate MOSFET (GME CGT MOSFET) has been done, and the influence of technology variations such as channel length and gate material workfunction variations is explored using an ATLAS 3-D device simulator. The simulation results reveal that the GME CGT MOSFET design displays a significant enhancement in the device's linearity and intermodulation distortion performance in terms of the figure-of-merit metrics VIP2, VIP3, IIP3, and IMD3 and the higher order transconductance coefficients
gm
1,
gm
2, and
gm
3. The results are, thus, useful for optimizing the device bias point for RFIC design with higher efficiency and better linearity performance.