High-speed characterization of a monolithically integrated GaAs-AlGaAs quantum-well laser-detector

The high-frequency response of a GaAs-AlGaAs edge-illuminated photodiode monolithically integrated with a single-quantum-well laser and resistor network has been measured and simulated. The measured response of the monitor diode to a step impulse applied to the laser exhibits a nonoptically induced precursor pulse. Simulations show this interference arises primarily from mutual inductive coupling between on-chip wiring and wirebond connections. If the coupling is eliminated, simulations show that the risetime of the laser-detector combinations is around 575 ps. Although these coupling effects are not intrinsic problems, the work demonstrates the importance of including packaging parasitics and on-chip wiring interactions in OEIC (optoelectronic integrated circuit) data link design.<
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