In-Plane-Gate Transparent $\hbox{SnO}_{2}$ Nanowire Transistors

In-plane-gate transparent SnO
₂
nanowire transistors gated by SnO
₂
-based solid electrolytes are fabricated on glass substrate at room temperature. Low-voltage (1.0 V) operation of such device is realized due to the large electric-double-layer capacitance of 0.75 μF/cm
²
at 20 Hz. The subthreshold slope, current on/off ratio, and field-effect mobility of the in-plane-gate transparent nanowire transistors are estimated to be 92 mV/decade, >; 10
⁵
, and 106.8 cm
²
/V · s, respectively. Such low-voltage in-plane-gate transparent nanowire transistors are promising for portable invisible sensors.