Photoluminescence of InGaAs islands on Si (111) substrate grown using micro-channel selective-area MOVPE

III-V hetero-integration on silicon is most attractive for lasers, SOAs, and detectors for silicon photonics. InGaAs disks on Si substrate have been grown using micro-channel selective-area metal-organic vapor phase epitaxy. We have measured the luminescent spectra by using the micro-photoluminescence systems and obtained broadband spectra in 1.3-2.1 μm range, suitable for the telecom and the data-communication wavelength.