Effects of annealing in sulfur vapor on electrodeposited CuInSe2 films

In this work we investigate the effects of annealing in sulfur vapor on electrodeposited (ED) CISe films. X-ray diffraction measurement of the as-ED samples show broad peaks in θ-2θ scans. The full width at half maximum (FWHM) of the XRD (112) peak decreases following annealing in sulfur indicating improved crystalline quality and grain growth. Raman spectroscopy shows different dominant vibrational modes for samples with low and high S contents. We have also measured the electrical properties such as J-V, impedance spectroscopy and thermal admittance spectroscopy (TAS) of the samples. The J-V and impedance characteristics suggest deterioration of electrical properties for high S content samples. TAS measurements suggest that high S content causes a distribution of trap states instead of a discrete state in the samples.