Field emission study of Te nanowire arrays grown on conducting silicon substrate

In this communication, synthesis of high quality and length controlled Te nanowire arrays directly grown on silicon substrate with and without the coating of seed layer by a facile hydrothermal method was reported. The most preferential orientation of tellurium NW's was found along [001] through micro structural investigation. Field emission properties of as grown and annealed under Ar: H
2
reduction atmosphere are studied meticulously. The emission current density of vacuum annealed Te nanowire arrays was found to be 25μA/cm
²
at 3.0 V/μm.