Field emission properties of a three-dimensional network of single-walled carbon nanotubes inside pores of porous silicon

This paper reports the characteristic field emission (FE) properties of single-walled carbon nanotubes (SWNTs) synthesized on the inside pores of a porous silicon (PS) substrate, as well as on the top surface of a PS substrate. Their turn-on fields and emission current densities are measured and compared with those of other types of SWNTs in similar environments. Investigation of field emission properties of single-walled carbon nanotubes (SWNTs) synthesized on the inside pores of a porous silicon (PS) substrate reveals a low turn-on field of about 2.25 V μm
^-1
at 10 μA/cm
²
and a high field-enhancement factor (6182) compare with other samples. A life time stability test is performed by monitoring the current density change before and after repeated exposure to O
₂
, suggesting that the pore channel can effectively prevent O
₂
⁺
ion etching from destroying the SWNTs within the pores of the PS layer.