Assessment of NBTI in Presence of Self-Heating in High- $k$ SOI FinFETs

We have experimentally investigated the threshold voltage shift due to negative bias temperature instability (NBTI). The NBTI stress in the absence of self-heating (SH) is performed at two different temperatures, i.e.,
T
= 25°C and 125°C, at bias conditions: gate voltage
V
_gs
= -2& V and drain voltage
V
_ds
= 0 V. To evaluate the effect of NBTI in the presence of SH, the stress is performed at room temperature and at
V
_gs
= -2 V and
V
_ds
= -1 V. It has been observed that NBTI in the presence of SH causes a significant shift in the threshold voltage.