A $\hbox{TiO}_{2}$ Nanowire MIS Photodetector With Polymer Insulator

The authors report the growth of TiO
₂
nanowires by heating the Ti/glass template and the fabrication of a TiO
₂
nanowire metal-insulator-semiconductor (MIS) photodetector (PD). Compared with a TiO
₂
nanowire metal-semiconductor- metal PD, it was found that we could achieve a photocurrent 29 times larger. It was also found that the dynamic response of the TiO
₂
nanowire MIS PD was stable and reproducible with an on/off current contrast ratio of around 180. With an incident light wavelength of 390 nm and an applied bias of 5 V, it was found that the measured responsivity of the PD was 2.46 × 10
^-3
A/W. Furthermore, the noise equivalent power and the detectivity of the fabricated TiO
₂
nanowire MIS PD were 7.49 × 10
^-12
W and 8.86 × 10
¹¹
cm · Hz
^0.5
· W
^-1
, respectively.