High power 1550 nm DFB lasers for long distance video transmission

Summary form only given. From a previous work we reported over 100 mW maximum chip power from 500 /spl mu/m cavity length 1550 nm DFB lasers using strained quantum well structures. To further increase optical power, we designed a 1000 /spl mu/m cavity length laser with a K value reduced by one half. There are several factors contributing to the control of the K value: the guiding layer composition and/or thickness, the separation between active and guiding layer, the grating duty cycle and the separate confinement structure.