Minority-carrier transport parameters in degenerate n-type silicon

Direct measurements of the minority-hole transport parameters in degenerate n-type silicon were done by analyzing transient photocurrent in the frequency domain. Minority-hole mobility is found to increase with doping for dopings larger than 4*10/sup 19/ cm/sup -3/. The ratio of minority-hole to majority-hole mobility is found to be about 2.8 at N/sub D/=7.2*10/sup 19/ cm/sup -3/. The measured lifetime shows a strongly Auger-dependent mechanism. The extracted Auger coefficient at 296 K is C/sub n/=2.22*10/sup -31/ cm/sup 6/-s/sup -1/, and is in agreement with that reported on other works. Self-consistent checking is used to validate the accuracy of the measured results.<
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