p-channel modulation-doped field-effect transistors based on AlSb/sub 0.9/As/sub 0.1//GaSb

Operation of the first AlSbAs/GaSb p-channel modulation-doped field-effect transistor (MODFET) is reported. Devices with 1- mu m gate length exhibit transconductance of 30 and 110 mS/mm at room temperature and 80 K, with respective maximum drain current densities of 25 and 80 mA/mm. The low field Hall mobility and sheet carrier density of this modulation doped structure were 260 cm/sup 2//V-s and 1.8*10/sup 12/ cm/sup -2/ at room temperature and 1700 cm/sup 2//V-s and 1.4*10/sup 12/ cm/sup -2/ at 77 K. Calculations based on these results indicate that room-temperature transconductances of 200 mS/mm or greater could be achieved. This device can be integrated with an InAs n-channel HFET for complementary circuit applications.<
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