Enlarged Photodetection Using ${\rm SiO}_{x}$ Nanowire Arrays

We have synthesized perpendicular SiO
_x
nanowire (NW) arrays on Si substrates and investigated them using scanning electron microscopy. Transmission electron microscopy and energy-dispersive spectroscopy have been used to investigate the single NW structure. A near-infrared emission at 700 nm is observed. In/SiO
_x
NW and In/SiO
_x
thin film (TF) contacts exhibit Schottky behavior. The SiO
_x
NW-based devices show six-fold improvements in photodetection efficiency in white-light illumination, compared to SiO
_x
TF-based devices under reverse bias condition.