Influence of annealing temperature on properties of Mn/Y co-doped Ba0.67Sr0.33TiO3 thin film prepared by RF magnetron sputtering

Mn/Y co-doped Ba
_0.67
Sr
_0.33
TiO
₃
(Mn+Y: BST) thin films were deposited on LaNiO
₃
(LNO)/SiO
₂
/Si substrates by radio frequency (RF) magnetron sputtering at substrate temperature of 400 °C. Influence of the annealing temperature on microstructure and electrical properties of the Mn+Y: BST films was investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) investigations revealed that all the films have dense and crack-free surface with a perovskite structure. The Mn+Y: BST films annealed at 700 °C showed the best electrical properties, with a dielectric constant of 875, dielectric loss of 0.032, tunability of 60% at room temperature and 100 kHz, and the leakage current density of 6.7×10
^-5
A/cm
²
at an electric field of 400 kV/cm, respectively.