Effects of gate insulator on thin film transistor with ZnO channel layer deposited by plasma assisted atomic layer deposition

We investigated zinc oxide (ZnO) thin films prepared by plasma assisted atomic layer deposition (PA-ALD), and thin-film transistors (TFTs) with ALD ZnO channel layer for application in next-generation displays. In this study, we investigated the effects of the gate insulator properties on the performance of TFTs with a ZnO channel layer deposited by PA-ALD. The TFTs with Al
₂
O
₃
gate insulator indicated high performance (5.1 cm
²
/Vs field effect mobility) without any thermal annealing. This result indicated a high-performance ZnO TFT with the films deposited by PA-ALD can be obtained at temperature below 100°C.