Broadband lumped package modeling for scaling multi-cell GaN HEMT power devices

In this paper lumped approach to establish a package model for multi-cell GaN devices is presented. EM simulated s-parameters are matched to that measured on open and short structures. Initial lumped equivalent R-L-C elements are obtained by studying scaling behavior on standard elements. The model is integrated with GaN unit cell model to construct a package device. The model behavior is validated at 0.9, 2.1 and 3.5GHz for output power levels exceeding 100Watts for 1 to 10 cells at 48Volts.