A new PSpice power MOSFET model with temperature dependent parameters: evaluation of performances and comparison with available models

A new PSpice model of power MOSFETs has been developed aiming to account for the parameter variations with the temperature. The paper discusses the new model in detail, showing the close correlation between the new quantities introduced and the experimental evidence that requires an improvement of the simulations carried out by similar available models. Comparison and evaluations of simulation runs (in static and dynamic conditions) obtained by the proposed model and other power MOSFET PSpice models are also presented and discussed. Finally, performances in terms of accuracy, simulation times, advantages and disadvantages of each model in different circuit applications are reported and compared with the experimental traces relative to actual devices.