Characterization of Channel-Diameter-Dependent Low-Frequency Noise in Silicon Nanowire Field-Effect Transistors

The low-frequency noise in the silicon nanowire field-effect transistor (SNWFET) is characterized using SNWFETs with different channel diameters
$d_{\rm NW}$
. The current density and the simulation result indicate that the volume inversion as manifested by the spatial charge distribution is enhanced in smaller
$d_{\rm NW}$
. The measured noise data are discussed based on the number and correlated mobility fluctuation model. It is shown that the low-frequency noise decreases in smaller
$d_{\rm NW}$
. This
$d_{\rm NW}$
-dependent noise behavior is clarified in terms of the effective oxide trap density and the fraction of inversion charges near the
$ \hbox{Si}$
–
$\hbox{SiO}_{2}$
interface.