Characterization of silicon field effect transistor sub-THz detectors for imaging systems

This document reports various aspects of silicon field-effect transistor structures response under high frequency continuous wave and pulsed irradiation. The detectors have been manufactured in standard 0.18 um CMOS technology. Their response show formerly predicted behavior and novel effects. Implementing a pair of non-antenna coupled gate is found to increase the sensitivity. Several structures reveal additional effects like polarity change depending on gate source potential and drain current. A responsivity enhancement technique is presented as well in not noise free realistic setups.