Correlated Flicker Noise and Hole Mobility Characteristics of $(\hbox{110})/\langle\hbox{110}\rangle$ Uniaxially Strained SiGe FINFETs

Hole mobility and flicker noise characteristics of uniaxially strained
$( \hbox{110})/\langle\hbox{110}\rangle$
 
$\hbox{Si}_{0.75} \hbox{Ge}_{0.25}$
pFINFETs
$(\hbox{SSGOI}_{0.25})$
are investigated in this letter. Equivalent gate referred flicker noise in
$ \hbox{SSGOI}_{0.25}$
is dominated by correlated number and mobility fluctuation in the low-bias regime and Hooge mobility fluctuation in the high-bias regime. The extracted Hooge parameter in
$\hbox{SSGOI}_{0.25}$
and in Si pFINFETs is
$\hbox{10}^{-5}$
and
$ \hbox{10}^{-4}$
, respectively. The lower value of the Hooge parameter in
$\hbox{SSGOI}_{0.25}$
pFINFETs is attributed to improved phonon-limited mobility compared to the SOI pFINFETs.
$\hbox{SSGOI}_{0.25}\ \hbox{FINFETs}$
are found to exhibit the lowest equivalent gate referred flicker noise among any nonplanar devices reported to date.