Wideband 50W packaged GaN HEMT with over 60% PAE through internal harmonic control in S-band

This paper presents an internally-matched packaged GaN HEMT for achieving not only high-efficiency and high-power performances but also wide bandwidth and insensitivity to harmonic terminations in S-band. The internal matching circuits of the optimized package enable to reach a wider bandwidth and to confine the harmonic impedances seen by the internal GaN powerbar into high-efficiency regions whatever the external impedances presented to the package. In a 50Ω environment, the packaged GaN HEMT delivers 45 W output power with more than 55% PAE from 2.9 to 3.7 GHz (24% relative bandwidth). By optimizing source and load impedances at the 1
^st
-harmonic, the packaged GaN HEMT demonstrates 50 W output power with more than 60% PAE over 21% bandwidth.