Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFETs

This paper discusses the empirical low-frequency (LP) noise behavior of hot-carrier degraded Lowly-Doped Drain (LDD) n-MOSFETs, which have been fabricated in a 0.7-μm CMOS technology. It is shown that the increase of the noise spectral density follows a t/sup 0.3/ power law dependence with stress time. Additionally, an empirical relationship will be shown between the input-referred noise spectral density S/sub VG/ and the transconductance g/sub m/ of the stressed devices. The practical consequences of this exponential dependence will be briefly discussed.