High On/Off Current Ratio p-InGaN/AlGaN/GaN HEMTs

An excellent on/off current ratio of 10
¹⁰
and a nearly ideal subthreshold slope of 65 mV/dec was confirmed in a p-InGaN/AlGaN/GaN high-electron-mobility transistor. Favorable
I
-
V
characteristics were achieved with the p-InGaN cap layer under the gate electrode. A dry etching technique with a low-damage p-InGaN cap layer resulted in a significantly low leakage current of 10
^-11
A/mm.