Mechanisms of ambient dependent mobility degradation in the graphene MOSFETs on SiO2 substrate

Two different mechanisms affecting the device instability and mobility degradation at graphene MOSFET on SiO
₂
substrate and their time constant, 40μsec and ~ 370μsec, have been identified. Oxygen/H
₂
O reaction at the surface of graphene was identified as a major source of device hysteresis causing mobility degradation and device instability.