Bidirectional selection device characteristics of ultra-thin (<3nm) TiO2 layer for 3D vertically stackable ReRAM application

We propose the feasibility of bidirectional selection device characteristics in ultrathin (<;3nm) TiO
₂
layer. We utilized the localized conducting path as virtual electrode to investigate device property at extremely scaled area. By using electrical method such as “forming” and “reset” processes in oxide, virtual electrode/sub-3nm-thick TiO
₂
/virtual electrode structure was achieved. The measured current-voltage characteristics of fabricated device exhibited uniform bidirectional selection behavior with a high selectivity (~10
⁵
) and showed the feasibility of high current density (>;10
⁶
A/cm
²
).