High performance Ω-gate Ge FinFET featuring low temperature Si2H6 passivation and implantless Schottky-barrier NiGe metallic Source/Drain

We report the first Ω-gate Germanium (Ge) p-channel FinFET with low-temperature Si
₂
H
₆
passivation and implantless Schottky-barrier nickel germanide (NiGe) metallic Source/Drain, formed on high-quality GeOI substrates using sub-400 °C process modules. As compared with reported multi-gate (MuG) Ge devices in which the Ge channels were formed by top-down approaches, the Ge FinFETs in this work have a record high on-state current I
_ON
of ~494 μA/μm at V
_GS
- V
_TH
= -1 V and V
_DS
= -1 V. A high I
_ON
/I
_OFF
ratio of more than 3×10
⁴
and a high peak saturation transconductance G
_MSatMax
of ~540 μS/μm were achieved.