Antimonide NMOSFET with source side injection velocity of 2.7×107 cm/s for low power high performance logic applications

Antimonide (Sb) quantum well (QW) MOSFETs are demonstrated with integrated high-κ dielectric (1nmAl
₂
O
₃
-10nm HfO
₂
). The long channel Sb NMOS exhibits effective electron mobility of 6,000 cm
²
/Vs at high field (2 × 10
¹²
/cm
²
of charge density (N
_s
)), which is the highest reported value for any III-V MOSFET. The short channel Sb NMOSFET (L
_G
= 150nm) exhibits a cut-off frequency (f
_T
) of 120GHz, f
_T
- L
_G
product of 18GHz.μm and source side injection velocity (v
_eff
) of 2.7×10
⁷
cm/s, at drain bias (V
_DS
) of 0.75V and gate overdrive of 0.6V. The measured f
_T
and f
_T
× L
_G
are 2 x higher, and v
_eff
is 4× higher than Si NMOS (1.0-1.2V V
_DD
) at similar L
_G
, and are the highest for any III-V MOSFET.