Process-improved RRAM cell performance and reliability and paving the way for manufacturability and scalability for high density memory application

Here for the first time we discuss RRAM cell performance and reliability through process improvement. Excellent post-cycling (10
⁶
) retention and post-bake retention and endurance have been achieved for the optimized process conditions. The optimized RRAM cells show potential for manufacturability and scalability for high density memory application.