Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS

High-performance strain-engineered ETSOI devices are reported. Three methods to boost the performance, namely contact strain, strained SOI (SSDOI) for NFET, and SiGe-on-insulator (SGOI) for PFET are examined. Significant performance boost is demonstrated with competitive drive currents of 1.65mA/µm and 1.25mA/µm, and I
eff
of 0.95mA/µm and 0.70mA/µm at I
off
=100nA/µm and V
DD
of 1V, for NFET and PFET, respectively.