Towards high performance Ge1−xSnx and In0.7Ga0.3As CMOS: A novel common gate stack featuring sub-400 °C Si2H6 passivation, single TaN metal gate, and sub-1.3 nm EOT

We report a novel common gate stack solution for Ge
_1-x
Sn
_x
P-MOSFET and In
_0.7
Ga
_0.3
As N-MOSFET, featuring sub-400°C Si
₂
H
₆
passivation, sub-1.3 nm EOT, and single TaN metal gate. Symmetric V
_TH
, high performance, low gate leakage, negligible hysteresis, and excellent reliability were realized. Using this gate stack, the world's first GeSn short-channel device with gate length L
_G
down to 250 nm was realized. Drive current of more than 1000 μA/μm was achieved, with peak intrinsic transconductance of ~465 μS/μm at V
_DS
of -1.1 V.