An improved VBIC model for InP DHBTs

An emprical model is established for InP/InGaAs DHBTs based on the VBIC model. The heterojunction barrier and current blocking effect are considered in the current expressions. And new empirical models for transit time and collector capacitance are proposed by considering the voltage and current dependence. The excellent fitting results show that the improved model has better accuracy than the conventional VBIC model.