Evolution of temporary wafer (de)bonding technology towards low temperature processes for enhanced 3D integration

Among the technological developments pushed by the emergence of 3D Stacked IC technologies, wafer thinning has become a key element in device processing over the past years. One major criteria, being Total Thickness Variation after thinning, various aspects in the temporary bonding step will be discussed with this respect. While these elements are now becoming mature enough for high-volume manufacturing, thin wafer debonding and handling still remain challenging and are still prone for evolution.