SOI platform and III-V integrated active photonic device by direct bonding for data communication

The recent research progress of Si/III-V hetero-integration by Ar/O
₂
plasma assisted direct bonding in air ambient was reported. The efficient current injection from SOI micro rib to InGaAsP active layer has been achieved. The InGaAsP MQW layer was bonded onto the SOI platform to realize several hetero-integrated active photonic devices such as a direct-current-pumped Fabry-Perot Laser and a waveguide photodiode. The Si/III-V Fabry-Perot Laser demonstrated cw operation under 5°C with 75mA threshold current. The Si/III-V photodiode showed 65% quantum efficiency at 1550nm.