Xs-MET, a reduced complexity fabrication process using complementary heterostructure field effect transistors for analog, low power, space applications

The requirements for space-based integrated circuit applications are defined with an emphasis on being radiation tolerant and low power consuming. Flexible analog signal processors (FASPs) are outlined as a means by which effective circuit designs can be utilized to perform a multitude of tasks. The development of complementary III-V technologies have been proven to meet the demands of the space environment, and have demonstrated the potential for frequency operation beyond 1 GHz using power supply voltages at or below 1.5 Volts. The novel fabrication process known as /spl chi/s-MET (pronounced kismet, which uses the Greek letter /spl chi/, and stands for complementary heterostructure integrated single metal transistor), is introduced as manufacturing technique to be used in FASP design. The /spl chi/s-MET fabrication process is outlined with preliminary device results presented. An example of a FASP circuit design using /spl chi/s-MET is provided. Conclusions regarding the utilization of the /spl chi/s-MET process for FASPs are outlined with comments focusing on a space-based demonstration.