Surface potential model of a high-k HfO2-Ta2O5 capacitor

A compact model of a MOS capacitor with high-k HfO
₂
-Ta
₂
O
₅
mixed layer stack is developed in Matlab. Model equations are based on the surface potential description of PSP model. After fitting the C-V characteristics in Matlab the model is coded in Verilog-A hardware description language to interface with Spectre circuit simulator within Cadence CAD system. The results are validated against experimental measurements of high-k dielectric structure.