Simplified method to calculate the band bending and the subband energies in MOS capacitors

A simplified method is introduced to calculate the band bending, the charge densities, and the quantum mechanical fingerprint of the metal-oxide-semiconductor (MOS) capacitor in depletion and inversion. The model features self-consistency of the main quantum mechanical parameters of the system with a low numerical effort in the computation. Example computations are presented, the results of which are close to those obtained from much more complicated, fully self-consistent calculations.