Strain Control of Si and Si1-yCy Layers in Si/Si1-yCy/Si(100) Heterostructures

This paper demonstrated that lattice constant and Raman shifts of Si-Si and Si-C modes of Si
_1-y
C
_y
are normalized by C fraction obtained from XPS C
_1s
peak at 283.3 eV that is substitutional C fraction. By stripe-shape patterning of the Si(10 nm)/Si
_0.98
C
_0.02
(20-60 nm)/Si(100) heterostructure, compressive-strained Si cap layer was realized.