Simulation of transient enhanced diffusion of boron induced by silicon self-implantation

The time, dose, and energy dependence of boron transient enhanced diffusion (TED) induced by silicon self-implantation has been simulated taking into account the time evolution of self-interstitial clusters. The kinetics of cluster dissolution and growth are combined with the kick-out mechanism for boron diffusion, and the decrease in the cluster evolution rate with time is taken into account. Using a unified set of parameters, the simulation explains some complex characteristics of TED; that is, the enhancement is independent of the implant dose at short annealing times, while it increases with increasing implant dose after longer annealing times. In addition, the implant energy dependence of TED can be explained by the proximity of the damage to the surface.