Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer

An InGaN/GaN superlattice (SL) with Mg-doped barriers was designed and inserted into the InGaN-based blue light-emitting diodes (LEDs) as a hole gathering layer (HGL) to promote hole injection into the active region. The fabricated LEDs with the SL HGL show 36.4% increase in light output power at an injection current of 200 mA. Meanwhile, the efficiency droop is also mitigated effectively, as compared to the traditional LEDs. The improved performance is attributed to increased hole injection efficiency and decreased electron leakage into the p-type region.