Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs

Charge trapping and slow (from 10 s to >; 1000 s) detrapping in AlGaN/GaN high electron mobility transistors (HEMTs) designed for high breakdown voltages ( >; 1500 V) is studied through a combination of electrical, thermal, and optical methods to identify the impact of Al molefraction and passivation on trapping. Trapping due to 5-10 V drain bias stress in the on-state (V
_gs
= 0) is found to have significantly slower recovery, compared with trapping in the off-state (V
_gs
<; V
_th
, V
_ds
= 0). Two different trapping components, i.e., TG1 (E
_a
= 0.6 eV) and TG2 (with negligible temperature dependence), in AlGaN dominate under gate bias stress in the off-state. Al
_0.15
Ga
_0.85
N shows much more vulnerability to trapping under gate stress in the absence of passivation than does AlGaN with a higher Al mole fraction. Under large drain bias, trapping is dominated by a much deeper trap TD. Detrapping under monochromatic light shows TD to have E
_a
1.65 eV. Carbon doping in the buffer is shown to introduce threshold voltage shifts, unlike any of the other traps.