Performance Breakthrough in Gate-All-Around Nanowire n- and p-Type MOSFETs Fabricated on Bulk Silicon Substrate

We demonstrate high-performance silicon-nanowire gate-all-around MOSFETs (GAA SNWFETs) fabricated on bulk Si by a novel top-down complementary MOS-compatible method. The fabricated nand p-type GAA SNWFETs of ~50-nm gate length and of ~6-nm diameter show superior device performance, i.e., driving capability of 2.6 × 10
³
/2.9 × 10
³
μA/μm at |V
_D
| = |V
_G
- V
_t
| = 1.0 V, I
_on
/I
_off
ratio as high as 5 × 10
⁸
/10
⁹
, and excellent short-channel-effect immunity with subthreshold slope of 67/64 mV/dec and drain-induced barrier lowering of 6 mV/V, respectively. GAA SNWFETs and FinFETs fabricated on bulk Si were also compared by the investigation of both experiments and Technology Computer Aided Design simulation. The superiority of GAA SNWFETs over FinFETs is evidenced in this paper.