Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition

We developed a thin-film transistor (TFT) with an amorphous-indium–gallium–zinc oxide (IGZO) channel and aluminium oxide (
$\hbox{AlO}_{\rm x}$
) gate dielectric stack that was formed using a solution-based atmospheric pressure chemical vapor deposition. A breakdown electric field of 5.9 MV/cm and a dielectric constant of 6.8 were achieved for the
$\hbox{AlO}_{\rm x}$
gate dielectric. The nonvacuum-processed IGZO TFT gave a field-effect mobility of 4.2
$\hbox{cm}^{2}\cdot \hbox{V}^{-1}\cdot \hbox{s}^{-1}$
and an on/off current ratio of over
$\hbox{10}^{8}$
. Moreover, the proposed deposition method is a powerful tool for material research to explore multicomponent oxide insulators and semiconductors.