Impact of Individual Charged Gate-Oxide Defects on the Entire $I_{D}$–$V_{G}$ Characteristic of Nanoscaled FETs

The measurement of the entire I
_D
-V
_G
characteristic of a nanoscaled pMOSFET before and after the capture of a single elementary charge in a gate-oxide defect is demonstrated. The impact of a single trapped carrier on the device characteristics is compared with 3-D atomistic device simulations. The I
_D
-V
_G
behavior is identified to depend on the location of the oxide defect with respect to the critical spot of the current percolation path in the channel.