Low-frequency noise behaviour of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton

The Low-Frequency (LF) noise in Bulk and DTMOS triple-gate FinFETs is experimentally investigated under 60 MeV proton irradiation. Moreover, the important figures of merit for the analog performance such as Early voltage and intrinsic voltage gain will be analyzed. The results indicate that the better electrical characteristics and analog performance of DTMOS FinFETs make them very competitive candidates for low-noise RF analog applications in a radiation environment.