Graphene-based embedded-oxide-trap memory (gEOTM) for flexible electronics application

A The non-volatile gEOTMs are fabricated using a single-layer graphene (SLG) channel with an Al
2
O
3
gate oxide layer, in which an ion-bombarded AlO
x
layer is intentionally formed by oxygen ion bombardment (OIB) to create the charge trap sites. The whole processes are carried out at temperature below 120°C to exploit gEOTM's compatibility to the flexible substrates. The devices shows a large memory window (> 11.0 V), attributing to the effective electron-injection into the trap sites in AlO
x
. The results suggest that the gEOTM has potential applications for the high-density-memory devices and modules in flexible electronics.