Planar GeOI TFET Performance Improvement With Back Biasing

Reverse back biasing of a planar germanium-on-insulator tunneling field-effect transistor provides for significant improvement in
I
_ON
/
I
_OFF
, by over an order of magnitude for 0.25 V operating voltage. Optimization of the gate-to-source overlap and source doping gradient is key to maximizing the benefit of back biasing.