High-Performance InAs Nanowire MOSFETs

In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off characteristics. An n-i-n doping profile was used to reduce the source and drain resistances, and an Al
₂
O
₃
/HfO
₂
bilayer was introduced in the high- process. The nanowires exhibit high drive currents, up to 1.25 A/mm, normalized to the nanowire circumference, and current densities up to 34 MA/cm
²
(V
_D
= 0.5 V) . For a nominal L
_G
= 100 nm, we observe an extrinsic transconductance (g_m) of 1.23 S/mm and a subthreshold swing of 93 mV/decade at V
_D
= 10 mV .