Comparative PSCAD and Matlab/Simulink simulation models of power losses for SiC MOSFET and Si IGBT devices

Silicon carbide devices have several advantages, including high blocking voltage, lower conduction losses, and lower switching losses, when compared to silicon-based devices. This paper demonstrates high power and high frequency operation of the SiC MOSFETs compared to conventional Si IGBT with a similar power rating. The commercial SiC MOSFET QJD1210007 (1200V/100A) from POWEREX and Si IGBT CM100TF-24H (1200V/100A) from Mitsubishi were used in this study. PSCAD and Matlab/Simulink models were used to analyze the power losses of the devices. The following studies were carried out: (i) a comparison between PSCAD and Matlab/Simulink simulation results for a push-pull converter and boost converter, (ii) switching power loss calculations via Matlab/Simulink and accurate loss measurements, and (iii) finally a prototype was built to gather physical measurements to compare with the simulation results. The SiC MOSFET model has been verified by comparing the simulation results with experimental switching waveforms. Based upon the experimental and analytical results, our results show that Matlab/Simulink provides better simulation capability for computing switching losses of the semiconductor devices under investigation. The characterization and modeling processes are generic enough so that these methods can be applied to study new SiC devices.