Fast and accurate extraction of capacitance parameters for the Statz MESFET model

A modified approach to S-parameter fitting of measured MESFET data to the Statz's model equations is presented. The technique only requires one sweep of measured S-parameters versus frequency at a single bias point. In addition, there is a reduced need for optimization during the extraction procedure. The additional information in the data-fitting code reduces problems with measurement noise and calibration error. The presented method was developed and tested in HP-ICCAP, a software tool for parameter extraction. All measurements are controlled by this software.